TC55VBM416AFTN55

IC SRAM 16MBIT 55NS 48TSOP

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TC55VBM416AFTN55 Picture
SeekIC No. : 003558575 Detail

TC55VBM416AFTN55: IC SRAM 16MBIT 55NS 48TSOP

floor Price/Ceiling Price

Part Number:
TC55VBM416AFTN55
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/12

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Product Details

Quick Details

Series: - Manufacturer: Toshiba
Format - Memory: RAM Memory Type: SRAM
Available Set Gain : 5.9 dB Memory Size: 16M (1M x 16)
Speed: 55ns Interface: Parallel
Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C
Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP    

Description

Series: -
Operating Temperature: -40°C ~ 85°C
Format - Memory: RAM
Memory Type: SRAM
Interface: Parallel
Packaging: Tray
Speed: 55ns
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP
Memory Size: 16M (1M x 16)
Voltage - Supply: 2.3 V ~ 3.6 V
Manufacturer: Toshiba


Features:

• Low-power dissipation Operating: 9 mW/MHz (typical)
• Single power supply voltage of 2.3 to 3.6 V
• Power down features usingCE1 and CE2
• Data retention supply voltage of 1.5 to 3.6 V
• Direct TTL compatibility for all inputs and outputs
• Wide operating temperature range of −40° to 85°C
• Standby Current (maximum):
3.6V 15 A
3.0 V 8 A






Pinout

  Connection Diagram




Specifications

SYMBOL RATING VALUE UNIT
VDD Power Supply Voltage −0.3~4.2 V
VIN Input Voltage −0.3*~4.2 V
VI/O Input/Output Voltage −0.5~VDD + 0.5 V
PD Power Dissipation 0.6 W
Tsolder Soldering Temperature (10s) 260
Tstg Storage Temperature −55~150
Topr Operating Temperature −40~85

*: −2.0 V when measured at a pulse width of 20ns






Description

The TC55VBM416AFTN55 is a 16,777,216-bit static random access memory (SRAM) organized as 1,048,576 words by 16 bits/2,097,152 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6 V power supply. Advanced circuit technology provides both high speed andlow power at an operating current of 3 mA/MHz and a minimum cycle time of 55 ns. It is automatically placed in low-power mode at 0.9 A standby current (at VDD = 3 V, Ta = 25°C, typical) when chip enable (CE1 ) is asserted high or (CE2) is asserted low. There are three control inputs.CE1 and CE2 are used to select the device and for data retention control, and output enable (OE ) provides fast memory access. Data byte control pin (LB ,UB )provides lower and upper byte access. This TC55VBM416AFTN55 is well suited to various microprocessor system applications where high speed, low power and battery backup are required. And, with a guaranteed operating extreme temperature range of −40° to 85°C, the TC55VBM416AFTN55 can be used in environments exhibiting extreme temperature conditions. The TC55VBM416AFTN55 is available in a plastic 48-pin thin-small-outline package (TSOP).






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