TC55V400AFT-55

Low-power dissipation
Operating: 10.8 mW/MHz (typical)
Single power supply voltage of 2.3 to 3.6 V
Power down features usingCE1 and CE2
Data retention supply voltage of 1.5 to 3.6 V
Direct TTL compatibility for all inputs and outputs
Wide operating temperature range of 40° to 85°C

The TC55V400AFT-55 is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz and a minimum cycle time of 55 ns. TC55V400AFT-55 is automatically placed in low-power mode at 0.5
A standby current (at VDD  3 V, Ta  25°C, maximum) when chip enable (CE1 ) is asserted high or (CE2) is asserted low. There are three control inputs. CE1 and CE2 are used to select the device and for data retention control, and output enable (OE ) provides fast memory access. Data byte control pin (LB , UB ) provides lower and upper byte access. This device is well suited to various microprocessor system applications where high speed, low power and battery backup are required. And, with a guaranteed operating extreme temperature range of 40° to 85°C, the TC55V400AFT can be used in environments exhibiting extreme temperature conditions. The TC55V400AFT-55 is available in normal and reverse pinout plastic 48-pin thin-small-outline package (TSOP).