TC55V4000ST-70

 · Low-power dissipation
     Operating: 10.8 mW/MHz (typical) 
 · Single power supply voltage of 2.3 to 3.6 V 
 · Power down features usingCE 
 · Data retention supply voltage of 1.5 to 3.6 V 
 · Direct TTL compatibility for all inputs and outputs 
 · Standby Current (maximum):

The TC55V4000ST-70 is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits.
Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6 V
power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3
mA/MHz and a minimum cycle time of 70 ns. TC55V4000ST-70 is automatically placed in low-power mode at 0.5A standby
current (at V_DD= 3 V, Ta = 25) when chip enable CE) is asserted high. There are two control inputs.  CE is OE) provides fast memory access. This  used to select the device and for data retention control, and output enable (device is well suited to various microprocessor system applications where high speed, low power and battery
backup are required. The TC55V4000ST-70 is available in a normal pinout plastic 32-pin thin-small-outline package
(TSOP).