DescriptionThe TC55V2161FT-85 is a 2,097,152-bit static radom access memory organized as 131,072 words by 16 bits.Fabricated using toshiba's CMOS silicon gate process technology,this device operates from a single 2.7 to 3.6V power supply. Features of the TC55V2161FT-85 are:(1)loe-power dissipatio...
TC55V2161FT-85: DescriptionThe TC55V2161FT-85 is a 2,097,152-bit static radom access memory organized as 131,072 words by 16 bits.Fabricated using toshiba's CMOS silicon gate process technology,this device operates...
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Features: Very Low Dropout Voltage....120mV typ at 100mA 380mV typ at 200mAHigh Output Current.......
Features: • Low power dissipation: 27.5mW/MHz (typ.)• Standby current: 4m A (max.) at ...
The TC55V2161FT-85 is a 2,097,152-bit static radom access memory organized as 131,072 words by 16 bits.Fabricated using toshiba's CMOS silicon gate process technology,this device operates from a single 2.7 to 3.6V power supply.
Features of the TC55V2161FT-85 are:(1)loe-power dissipation operating is 10.8 mW/MHz;(2)single power supply voltage of 2.7 to 3.6V;(3)power down features using CE and CS;(4)data ratention supply voltage of 2 to 3.6V;(5)direct TTL compatibility for all inputs and outputs;(6)standby current;(7)access times;(8)package is TSOP II 44-P-400-0.80(FT).
The absolute maximum ratings of the TC55V2161FT-85 can be summarized as:(1):the symbol is VDD,the rating is power supply voltage,the value is -0.3 to 4.6,the unit is V;(2):the symbol is VIN,the rating is input voltage,the value is -0.3 to 4.6,the unit is V;(3):the symbol is VI/O,the rating is input/output voltage,the value is -0.5 to VDD+0.5,the unit is V;(4):the symbol is PD,the rating is power dissipation,the value is 0.8,the unit is W;(5):the symbol is Tsolder,the rating is soldering temperature (10s),the value is 260,the unit is ;(6):the symbol is Tstrg,the storage temperature,the value is -55 to 150,the unit is ;(7):the symbol is Tsolder,the rating is operating temperature,the value is 0 to 70,the unit is .