TC55V16256FT-12

The TC55V16256FT-12 is a 4194304-bit high-speed ststic random access memory (SRAM) organized as 262144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from a single 3.3 V power supply. Chip TC55V16256FT-12 enable can be used to place the device in a low-power mode and output enable provides fast memory access. Data byte control signals provide lower and upper byte access. This device is well suited to cache memory applications where high-speed access and high-speed storage are required. All inputs and outputs are directly LVTTL compatible. The TC55V16256FT-12 is available in plastic 44-pin SOJ and TSOP with 400 mil width for high density surface assembly.

Features of the TC55V16256FT-12 are:(1)fast access time (the following are maximum values);(2)low power dissipation;(3)single power supply voltage of 3.3V+/-0.3V;(4)fully static operation;(5)all inputs and outputs are LVTTL compatible;(6)output buffer control using OE;(7)data byte control using LB and UB.

The absolute maximum ratings of the TC55V16256FT-12 can be summarized as:(1)power supply voltage:-0.5 to 4.6 V;(2)input terminal voltage:-0.5 to 4.6 V;(3)input/output terminal voltage:-0.5 to VDD+0.5 V;(4)power dissipation:1.4 W;(5)soldering temperature (10s):260;(6)storage temperature:-65 to 150;(7)operating temperature:-10 to 85.If you want to know more information such as the electrical characteristics about the TC55V16256FT-12,please download the datasheet in www.seekic.com or www.chinaicmart.com .