TC55V1001STI-10

The TC55V1001STI-10 is one member of the TC55V1001 family which is designed as the 1,048,576-bit static random access memory (SRAM) organized as 262,144 words by 8 bits. Fabricated using Toshiba's CMOS silicon gate process technology, this TC55V1001STI-10 operates form a single 2.7 V to 3.6 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz and a minimum cycle time of 85 ns.

Features of the TC55V1001STI-10 are:(1)low-power dissipation operating: 10.8 mW/MHz (typical);(2)single power supply voltage of 2.7 V to 3.6 V;(3)power down features using CE1 and CE2;(4)data retention supply voltage of 2 to 3.6 V;(5)direct TTL compatibility for all inputs and outputs;(6)standby current of 3 uA (maximum) at Ta=25;(7)wide operating temperature range of -40 to +85 .

The absolute maximum ratings of the TC55V1001STI-10 can be summarized as:(1)power supply voltage: -0.3 to 4.6 V;(2)input voltage: -0.3 to 4.6 V;(3)iput / output voltage: -0.5 V to VDD+0.5 V;(4)power dissipation: 0.8 W;(5)soldering temperature (10 s): 260 ;(6)storage temperature: -55 to +150 ;(7)operating temperature: -40 to +85 . If you want to know more information about TC55V1001STI-10, please download the datasheet in www.seekic.com or www.chinaicmart.com .