TC55V1001ATRI-10

The TC55V1001ATRI-10 is designed as one kind of 1048576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. This device operates from a single 2.7 to 3.6 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3 mA / MHz and a minimum cycle time of 85 ns. TC55V1001ATRI-10 is automatically placed in low-power mode at 0.5 uA standby current when chip enable is asserted high or is asserted low.

Features of the TC55V1001ATRI-10 are:(1)low-power dissipation operating: 10.8 mW/MHz (typical);(2)single power supply voltage of 2.7 to 3.6 V;(3)power down features using CE1 and CE2;(4)data retention supply voltage of 2 to 3.6 V;(5)direct TTL compatibility for all inputs and outputs;(6)wide operating temperature range of -40 to +85 ;(7)standby current (Ta= 25 maximum).

The absolute maximum ratings of the TC55V1001ATRI-10 can be summarized as:(1)power supply voltage: -0.3 to 4.6 V;(2)input voltage: -0.3 to 4.6 V;(3)input / output voltage: -0.5 to VDD+0.5 V;(4)power dissipation: 0.8 W;(5)soldering temperature (10 s): 260 ;(6)storage temperature: -55 to +150 ;(7)operating temperature: -40 to +85 .

The electrical characteristics of this TC55V1001ATRI-10 can be summarized as:(1)input leakage current: +/- 1.0 uA;(2)output high current: -0.5 mA;(3)output low current: 2.1 mA;(4)output leakage current: +/- 1.0 uA;(5)output capacitance: 10 pF. If you want to know more information such as the electrical characteristics about TC55V1001ATRI-10, please download the datasheet in www.seekic.com or www.chinaicmart.com.