TC55V040AFT-55

The TC55V040AFT-55 is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this TC55V040AFT-55 operates from a single 2.3 to 3.6 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz and a minimum cycle time of 55 ns. It is automatically placed in low-power mode at 0.5 µA standby current (at VDD = 3 V, Ta = 25°C, maximum) when chip enable (CE1 ) is asserted high or (CE2) is asserted low. There are three control inputs. CE1 and CE2 are used to select the device and for data retention control, and output enable (OE ) provides fast memory access. This TC55V040AFT-55 is well suited to various microprocessor system applications where high speed, low power and battery backup are required. And, with a guaranteed operating extreme temperature range of −40° to 85°C, the TC55V040AFT can be used in environments exhibiting extreme temperature conditions. The TC55V040AFT-55 is available in normal and reverse pinout plastic 40-pinthin-small-outline package(TSOP).