TC55NEM216ATGN70

The TC55NEM216ATGN70 is designed as one kind of 4,194,304-bit static random access memory (SRAM) that is automatically placed in low-power mode at 1 A standby current (typ) when chip enable (CE) is asserted high and is available in a plastic 54-pin thin-small-outline package (TSOP). This TC55NEM216ATGN70 can also be used in environments exhibiting extreme temperature conditions.

Features of the TC55NEM216ATGN70 are:(1)low-power dissipation operating: 15 mW/MHz (typical); (2)single power supply voltage of 5 V +/- 10%; (3)power down features using CE1 and CE2; (4)data retention supply voltage of 2.0 to 5.5 V; (5)direct TTL compatibility for all inputs and outputs; (6)wide operating temperature range of -40 to 85 ; (7)Standby Current (maximum): 20 A.

The absolute maximum ratings of the TC55NEM216ATGN70 can be summarized as:(1)Power Supply Voltage: 4.5 to 5.5 V;(2)Input High Voltage: 2.2 to VDD+0.3 V;(3)Input Low Voltage: -0.3 V to 0.6 V;(4)Data Retention Supply Voltage: 2.0 V to 5.5 V;(5)Soldering Temperature (10s): 260 °C;(6)Storage Temperature: -55 to 150 °C;(7)Operating Temperature: -40 to 85 °C.

The electrical characteristics of this TC55NEM216ATGN70 can be summarized as:(1)Input Leakage Current: ±1.0 A;(2)Output High Current: -1.0 mA;(3)Output Low Current: 2.1 mA;(4)Output Leakage Current: ±1.0 A;(5)Input Capacitance: 10 pF;(6)Output Capacitance: 10 pF;(7)Read Cycle Time: 55 ns;(8)Address Access Time: 55 ns. If you want to know more information about TC55NEM216ATGN70, please download the datasheet in www.seekic.com or www.chinaicmart.com .