TC55NEM216AFTN55,70

The TC55NEM216AFTN55,70 is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by  16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this TC55NEM216AFTN55,70 operates from a single 5V ± 10% power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3  mA/MHz (typ) and a minimum cycle time of 55 ns. It is automatically placed in low-power mode at 1 µA standby current (typ) when chip enable (CE ) is asserted high. There are two control inputs. CE  is used to select the device and for data retention control, and output enable (OE ) provides fast memory access. Data byte control pin (LB , UB ) provides lower and upper byte access. This TC55NEM216AFTN55,70 is well suited to various microprocessor ystem applications where high speed, low power and battery backup are required. And, with a guaranteed operating extreme temperature range of −40° to 85°C, the TC55NEM216AFTN can be used in environments exhibiting extreme temperature conditions. The TC55NEM216AFTN55,70 is available in a plastic 54-pinthin-small-outline package (TSOP).