TC55NEM208AFTN55

The TC55NEM208AFTN55 is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this TC55NEM208AFTN55 operates from a single 5V ± 10% power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz (typ) and a minimum cycle time of 55 ns. It is automatically placed in low-power mode at 1 A standby current (typ) when chip enable (CE ) is asserted high. There are two control inputs. CE is used to select the device and for data retention control, and output enable (OE ) provides fast memory access. This TC55NEM208AFTN55 is well suited to various microprocessor system applications where high speed, low power and battery backup are required. And, with a guaranteed operating range of −40° to 85°C, the TC55NEM208AFPN/AFTN can be used in environments exhibiting extreme temperature conditions. The TC55NEM208AFTN55 is available in a standard plastic 32-pin small-outline package (SOP) and normal and reverse pinout plastic 32-pin
thin-small-outline package (TSOP).