TC554161AFTI-85L

Low-power dissipation Operating: 55 mW/MHz (typical)
Single power supply voltage of 5 V ±10%
Power down features using CE.
Data retention supply voltage of 2 to 5.5 V
Direct TTL compatibility for all inputs and outputs
Wide operating temperature range of 40° to 85°C

The TC554161AFTI-85L is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V
10% power supply. Advanced circuit technology provides both high speed and low power at an operating current of 10 mA/MHz (typ) and a minimum cycle time of 70 ns. TC554161AFTI-85L is automatically placed in low-power mode at 2 A standby current (typ) when chip enable (CE) is asserted high. There are two control inputs.CE is used to select the device and for data retention control, and output enable (OE provides fast memory access. Data byte control pin (LB , UB) provides lower and upper byte access. This TC554161AFTI-85L is well suited to various microprocessor system applications where high speed, low power and battery backup are required. And, with a guaranteed operating extreme temperature range of 40° to 85°C, the TC554161AFTI can be used in environments exhibiting extreme temperature conditions. The TC554161AFTI-85L is available in a plastic 54-pin thin -small-outline package (TSOP).