TC554161AFTI-70

Low-power dissipation Operating: 55 mW/MHz (typical)
Single power supply voltage of 5 V ±10%
Power down features using CE.
Data retention supply voltage of 2 to 5.5 V
Direct TTL compatibility for all inputs and outputs
Wide operating temperature range of 40° to 85°C

The TC554161AFTI-70 is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V
10% power supply. Advanced circuit technology provides both high speed and low power at an operating current of 10 mA/MHz (typ) and a minimum cycle time of 70 ns. It is automatically placed in low-power mode at 2 A standby current (typ) when chip enable (CE) is asserted high. There are two control inputs. CE is used to select the TC554161AFTI-70 and for data retention control, and output enable (OE  provides fast memory access. Data byte control pin (LB , UB ) provides lower and upper byte access. This device is well suited to various microprocessor system applications where high speed, low power and battery backup are required. And, with a guaranteed operating extreme temperature range of 40° to 85°C, the TC554161AFTI-70 TI can be used in environments exhibiting extreme temperature conditions. The TC554161AFTI is available in a plastic 54-pin thin -small-outline package (TSOP).