Features: · Low-power dissipation Operating: 55 mW/MHz (typical)· Single power supply voltage of 5 V ± 10%· Power down features using CE.· Data retention supply voltage of 2 to 5.5 V· Direct TTL compatibility for all inputs and outputs· Standby Current (maximum):PinoutSpecifications SYMBOL P...
TC554161AFT-70: Features: · Low-power dissipation Operating: 55 mW/MHz (typical)· Single power supply voltage of 5 V ± 10%· Power down features using CE.· Data retention supply voltage of 2 to 5.5 V· Direct TTL com...
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Features: Very Low Dropout Voltage....120mV typ at 100mA 380mV typ at 200mAHigh Output Current.......
Features: • Low power dissipation: 27.5mW/MHz (typ.)• Standby current: 4m A (max.) at ...
SYMBOL | PARAMETER |
RANGE |
UNIT |
VDD VIN VI/O PD Tsolder Tstg Topr |
Power Supply Voltage Input Voltage Input/Output Voltage Power Dissipation Soldering Temperature (10s) Storage Temperature Operating Temperature |
-0.3~7.0 -0.3*~7.0 -0.5~VDD + 0.5 0.6 260 -55~150 0~70 |
V V V W °C °C °C |
The TC554161AFT-70 is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V 10% power supply. Advanced circuit technology provides both high speed and low power at an operating current of 10 mA/MHz (typ) and a minimum cycle time of 70 ns. TC554161AFT-70 is automatically placed in low-power mode at 2 A standby current (typ) when chip enable (CE) is asserted high. There are two control inputs. CE is used to select the device and for data retention control, and output enable (OE ) provides fast memory access. Data byte control pin (LB , UB ) provides lower and upper byte access. This device is well suited to various microprocessor system applications where high speed, low power and battery backup are required. The TC554161AFT-70 is available in a plastic 54-pin thin-small-outline package (TSOP).