TC55257DTRL-55V

The TC55257DTRL-55V is designed as one kind of 262,144-bit static random access memory (SRAM) organized as 32,768 words by 8 bits. This TC55257DTRL-55Voperates from a single 5 V +/- 10 % power supply. Advanced circuit technology provides both high speed and low power at an operating current of 5 mA / MHz and a minimum cycle time of 55 ns. TC55257DTRL-55V is automatically placed in low-power mode at 0.3 uA standby current when chip enable is asserted high or is asserted low.

Features of the TC55257DTRL-55V are:(1)low-power dissipation operating: 27.5 mW/MHz (typical);(2)single power supply voltage of 5 V +/- 10 %;(3)power down features using CE1 and CE2;(4)data retention supply voltage of 2 to 5.5 V;(5)direct TTL compatibility for all inputs and outputs;(6)wide operating temperature range of -40 to +85 ;(7)standby current of 2 uA (maximum) (Ta= 25 maximum).

The absolute maximum ratings of the TC55257DTRL-55V can be summarized as:(1)power supply voltage: -0.3 to 7.0 V;(2)input voltage: -0.3 to 7.0 V;(3)input / output voltage: -0.5 to VDD+0.5 V;(4)power dissipation: 1.0 / 0.6 W;(5)soldering temperature (10 s): 260 ;(6)storage temperature: -55 to +150 ;(7)operating temperature: 0 to +70 .

The electrical characteristics of this TC55257DTRL-55V can be summarized as:(1)input leakage current: +/- 1.0 uA;(2)output high current: -1.0 mA;(3)output low current: 4.0 mA;(4)output leakage current: +/- 1.0 uA;(5)output capacitance: 10 pF. If you want to know more information such as the electrical characteristics about TC55257DTRL-55V, please download the datasheet in www.seekic.com or www.chinaicmart.com.