TC55257DFL-70L

The TC55257DFL-70L is designed as one kind of 262,144-bit static random access memory (SRAM) device that is organized as 32,768 words by 8 bits. And this device is automatically placed in low-power mode at 2 uA standby current (typ) when chip enable (CE) is asserted high. And TC55257DFL-70L is well suited to various microprocessor system applications where high speed, low power and battery backup are required.

Features of the TC55257DFL-70L are:(1)Low-power dissipation Operating: 27.5 mW/MHz (typical); (2)Single power supply voltage of 5 V +/- 10 %; (3)Power down features using CE; (4)Data retention supply voltage of 2.7 to 5.5 V; (5)Direct TTL compatibility for all inputs and outputs.

The absolute maximum ratings of the TC55257DFL-70L can be summarized as:(1)Power Supply Voltage: -0.3 to 7.0 V;(2)Input Voltage: -0.3 to 7.0 V;(3)Input/Output Voltage: -0.5 to VDD+0.5 V;(4)Power Dissipation: 0.6 W;(5)Soldering Temperature (10s): 260 °C;(6)Storage Temperature: -55 to 150 °C;(7)Operating Temperature: 0 to 70 °C. If you want to know more information such as the electrical characteristics about the TC55257DFL-70L, please download the datasheet in www.seekic.com or www.chinaicmart.com.