Features: • Low power dissipation: 27.5mW/MHz (typ.)• Standby current: 4m A (max.) at Ta = 25 °C• 5V single power supply• Access time (max.)• Power down feature: CE1, CE2• Data retention supply voltage: 2.0 ~ 5.5V• Inputs and outputs directly TTL compatibl...
TC551001BTRL-70L: Features: • Low power dissipation: 27.5mW/MHz (typ.)• Standby current: 4m A (max.) at Ta = 25 °C• 5V single power supply• Access time (max.)• Power down feature: CE1, C...
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Features: Very Low Dropout Voltage....120mV typ at 100mA 380mV typ at 200mAHigh Output Current.......
Features: • Low power dissipation: 27.5mW/MHz (typ.)• Standby current: 4m A (max.) at ...
SYMBOL |
ITEM |
RATING |
UNIT |
VDD |
SYMBOL ITEM RATING UNIT |
-0.3 ~ 7.0 |
V |
VIN |
Input Voltage |
-0.3 ~ 7.0 |
V |
V I/O |
Input and Output Voltage |
-0.5 ~ VDD + 0.5 |
V |
PD |
Power Dissipation |
1.0/0.6** |
W |
TSOLDER |
Soldering Temperature (10s) |
260 |
°C |
TSTRG |
Storage Temperature |
-55 ~ 150 |
°C |
TOPR |
Operating Temperature |
0 ~ 70 |
°C |
The TC551001BTRL-70L is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 5mA/MHz (typ.) and a minimum cycle time of 70ns. When CE1 is a logical high, or CE2 is low, the device is placed in a low power standby mode in which the standby current is 2 m A typically. The TC551001BTRL-70L has three control inputs. Chip Enable inputs (CE1, CE2) allow for device selection and data retention control, while an Output Enable input (OE) provides fast memory access. The TC551001BTRL-70L is suitable for use in microprocessor application systems where high speed, low power, and battery backup are required.
The TC551001BTRL-70L is offered in a standard dual-in-line 32-pin plastic package, a small outline plastic package, and a thin small outline plastic package (forward, reverse type).