Features: • Low power dissipation: 27.5mW/MHz (typ.)• Standby current: 4m A (max.) at Ta = 25 °C• 5V single power supply• Access time (max.)• Power down feature: CE1, CE2• Data retention supply voltage: 2.0 ~ 5.5V• Inputs and outputs directly TTL compatibl...
TC551001BFTL: Features: • Low power dissipation: 27.5mW/MHz (typ.)• Standby current: 4m A (max.) at Ta = 25 °C• 5V single power supply• Access time (max.)• Power down feature: CE1, C...
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Features: Very Low Dropout Voltage....120mV typ at 100mA 380mV typ at 200mAHigh Output Current.......
Features: • Low power dissipation: 27.5mW/MHz (typ.)• Standby current: 4m A (max.) at ...
SYMBOL |
ITEM |
RATING |
UNIT |
VDD |
SYMBOL ITEM RATING UNIT |
-0.3 ~ 7.0 |
V |
VIN |
Input Voltage |
-0.3 ~ 7.0 |
V |
V I/O |
Input and Output Voltage |
-0.5 ~ VDD + 0.5 |
V |
PD |
Power Dissipation |
1.0/0.6** |
W |
TSOLDER |
Soldering Temperature (10s) |
260 |
°C |
TSTRG |
Storage Temperature |
-55 ~ 150 |
°C |
TOPR |
Operating Temperature |
0 ~ 70 |
°C |
The TC551001BFTL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 5mA/MHz (typ.) and a minimum cycle time of 70ns. When CE1 is a logical high, or CE2 is low, the device is placed in a low power standby mode in which the standby current is 2 m A typically. The TC551001BFTL has three control inputs. Chip Enable inputs (CE1, CE2) allow for device selection and data retention control, while an Output Enable input (OE) provides fast memory access. The TC551001BFTL is suitable for use in microprocessor application systems where high speed, low power, and battery backup are required.
The TC551001BFTL is offered in a standard dual-in-line 32-pin plastic package, a small outline plastic package, and a thin small outline plastic package (forward, reverse type).