DescriptionThe TC54256AP/AF is a 32,768 word*8 bit one time programmable read only memory and molded in a 28 pin plastic package. The TC54256AP/AF's access time is 200ns and has low power standby mode which reduces the power dissipation without increasing access time. The electrical characteristic...
TC54256AP: DescriptionThe TC54256AP/AF is a 32,768 word*8 bit one time programmable read only memory and molded in a 28 pin plastic package. The TC54256AP/AF's access time is 200ns and has low power standby mo...
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The TC54256AP/AF is a 32,768 word*8 bit one time programmable read only memory and molded in a 28 pin plastic package. The TC54256AP/AF's access time is 200ns and has low power standby mode which reduces the power dissipation without increasing access time. The electrical characteristics and programming method are the same as U.V.(EPROM TC57256AD's. Once programmed, the TC54256AP/AF cannot be erased because of using plastic DIP without transparent window.
The features of TC54256AP can be summarized as (1)peripheral circuit: CMOS memory cell: N-MOS; (2)low power dissipation active: 30mA/6.7MHz, standby: 100A; (3)fast access time: 200ns; (4)single 5V power supply; (5)full static operation; (6)high speed programming mode; (7)inputs and outputs TTL compatible; (8)pin compatible with ROM TC53257P, TMM23256P, EPROM TMM27256DlAD, TC57256DlAD, One time PROM TMM24256P/AP and TC54256P; (9)standard 28 pin DIP plastic package: TC54256AP; (10)plastic flat package: TC54256AF .
The absolute maximum ratings of TC54256AP are (1)VCC VCC power supply voltage: -0.6 ~7.0V; (2)VPP program supply voltage: -0.6~14.0V; (3)VIN input voltage: -0.6~7.0V; (4)VI/O input/output voltage: -0.6 to VCC+0.5W; (5)PD power dissipation 1.5W; (6)TSOLDER soldering temperature time: 260 `10°C`sec; (7)TSTRG storage temperature: -65 ~ 125°C; (8)TOPR operating temperature: -40~85°C.