DescriptionThe TC52456BJ is a CMOS multiport memory equiped with a 262,144-words by 4-bits dynamic random access memory(RAM) port and a 512 words by 4-bits static seial access memory(SAM) port. TC52456BJsupports three types of operations: random access to and from the RAM port, high speed serial a...
TC52456BJ: DescriptionThe TC52456BJ is a CMOS multiport memory equiped with a 262,144-words by 4-bits dynamic random access memory(RAM) port and a 512 words by 4-bits static seial access memory(SAM) port. TC52...
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The TC52456BJ is a CMOS multiport memory equiped with a 262,144-words by 4-bits dynamic random access memory(RAM) port and a 512 words by 4-bits static seial access memory(SAM) port. TC52456BJ supports three types of operations: random access to and from the RAM port, high speed serial access to and from the SAM port and bidirectional transfer of data between any selected row in the RAM port and the SAM port.
Features of the TC52456BJ are:(1)RAS access time is 80 ns max; (2)CAS access time is 25 ns max; (3)column address access time is 45 ns max; (4)cycle time is 150 ns min; (5)RAM-SAM bidirectional transfer.
The absolute maximum ratings of the TC52456BJ can be summarized as:(1): input output voltage(Vin,Vout) is -1.0 V to 7.0 V; (2): power supply voltage(Vcc) is -1.0 V to 7.0 V; (3): operating temperature(Topr) is 0 to 70; (4): storage temperature(Tstg) is -55 to 150; (5): soldering temperature time(Tsolder) is 260.10 sec; (6): power dissipation(PD) is 1 W; (7): short circuit output current(Iout) is 50 mA.