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TC51WKM616AXBN75

Features: ` Organized as 4,194,304 words by 16 bits ` Dual power supplies(2.6 to 3.3 V for core and1.7 to 2.2 V for output buffer) ` Direct TTL compatibility for all inputs and outputs ` Deep power-down mode: Memory cell data invalid ` Page operation mode: Page read operation by 8 words ` Logic co...

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SeekIC No. : 004513875 Detail

TC51WKM616AXBN75: Features: ` Organized as 4,194,304 words by 16 bits ` Dual power supplies(2.6 to 3.3 V for core and1.7 to 2.2 V for output buffer) ` Direct TTL compatibility for all inputs and outputs ` Deep power-...

TC51WKM616AXBN75 Data Sheet

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Part Number:
TC51WKM616AXBN75
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/12

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Product Details

Description



Features:

`  Organized as 4,194,304 words by 16 bits
`  Dual power supplies(2.6 to 3.3 V for core and 1.7 to 2.2 V for output buffer)
`  Direct TTL compatibility for all inputs and outputs
`  Deep power-down mode: Memory cell data invalid
`  Page operation mode: Page read operation by 8 words
`  Logic compatible with SRAM R/W (WE) pin
`  Standby current           Standby 100 A        Deep power-down standby 5A


Specifications

SYMBOL
RATING
VALUE
UNIT
VDD
Power Supply Voltage
-1.0 to 3.6
V
VDDQ
Output Buffer Power Supply Voltage
-1.0 to VDD +0.5(3.6V Max)M
V
VIN
Input Voltage for Address and Control Pins
-1.0 to 3.6M
V
VI/O
Input/Output Voltage for I/O Pins
-1.0 to VDDQ+ 0.5
V
Topr.
Operating Temperature
-25 to 85
Tstrg.
Storage Temperature
-55 to 150
Tsolder
 Soldering Temperature (10 s)
260
PD
 Power Dissipation
0.6
W
IOUT
 Short Circuit Output Current
50
mA



Description

The TC51WKM616AXBN75 is a 67,108,864-bit pseudo static random access memory(PSRAM) organized as 4,194,304 words by 16 bits. Using Toshiba's CMOS technology and advanced circuit techniques, it provides high density, high speed and low power. The device uses dual power supplies(2.6 to 3.3 V for core and 1.7 to 2.2 V for CE1,OE, and output buffer). The TC51WKM616AXBN75 also features SRAM-like W/R timing whereby the device is controlled by WE on asynchronous. The device has the page access operation. Page size is 8 words. The TC51WKM616AXBN75 also supports deep power-down mode, realizing low-power standby.




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