Features: • Organized as 2,097,152 words by 16 bits• Dual power supplies(2.6 to 3.3 V for core and 1.7 to 2.2 V for output buffer)• Direct TTL compatibility for all inputs and outputs• Deep power-down mode: Memory cell data invalid• Page operation mode: Page read oper...
TC51WKM516AXBN75: Features: • Organized as 2,097,152 words by 16 bits• Dual power supplies(2.6 to 3.3 V for core and 1.7 to 2.2 V for output buffer)• Direct TTL compatibility for all inputs and outp...
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SYMBOL | RATING | VALUE | UNIT |
VDD | Power Supply Voltage | −0.3~4.2 | V |
VIN | Input Voltage | −0.3*~4.2 | V |
VI/O | Input/Output Voltage | −0.5~VDD + 0.5 | V |
PD | Power Dissipation | 0.6 | W |
Tsolder | Soldering Temperature (10s) | 260 | |
Tstg | Storage Temperature | −55~125 | |
Topr | Operating Temperature | −40~85 |
The TC51WKM516AXBN75 is a 33,554,432-bit pseudo static random access memory(PSRAM) organized as 2,097,152 words by 16 bits. Using Toshiba's CMOS technology and advanced circuit techniques, it provides high density, high speed and low power. The device uses dual power supplies(2.6 to 3.3 V for core and 1.7 to 2.2 V for output buffer). The TC51WKM516AXBN75 also features SRAM-like W/R timing whereby the device is controlled by CE1 ,OE , and WE on asynchronous. The device has the page access operation. Page size is 8 words. The TC51WKM516AXBN75 also supports deep power-down mode, realizing low-power standby.