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TC51WHM616AXBN65

Features: • Organized as 4,194,304 words by 16 bits• Single power supply voltage of 2.6 to 3.3 V• Direct TTL compatibility for all inputs and outputs• Deep power-down mode: Memory cell data invalid• Page operation mode: Page read operation by 8 words• Logic comp...

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SeekIC No. : 004513873 Detail

TC51WHM616AXBN65: Features: • Organized as 4,194,304 words by 16 bits• Single power supply voltage of 2.6 to 3.3 V• Direct TTL compatibility for all inputs and outputs• Deep power-down mode: M...

TC51WHM616AXBN65 Data Sheet

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Part Number:
TC51WHM616AXBN65
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Organized as 4,194,304 words by 16 bits
• Single power supply voltage of 2.6 to 3.3 V
• Direct TTL compatibility for all inputs and outputs
• Deep power-down mode: Memory cell data invalid
• Page operation mode: Page read operation by 8 words
• Logic compatible with SRAM R/W (WE) pin
• Standby current Standby 100 µA Deep power-down standby 5 µA


Specifications

SYMBOL RATING VALUE UNIT
VDD Power Supply Voltage −1.0 to 3.6 V
VIN Input Voltage −1.0 to 3.6 V
VOUT Output Voltage −1.0 to 3.6 V
Topr Operating Temperature −25 to 85
Tstg Storage Temperature −55 to 150
Tsolder Soldering Temperature (10 s) 260
PD Power Dissipation 0.6 w
IOUT Short Circuit Output Current 50 mA



Description

The TC51WHM616AXBN65 is a 67,108,864-bit pseudo static random access memory(PSRAM) organized as 4,194,304 words by 16 bits. Using Toshiba's CMOS technology and advanced circuit techniques, it provides high density, high speed and low power. The TC51WHM616AXBN65 operates single power supply. The device also features SRAM-like W/R timing whereby the device is controlled by CE1 ,OE , and WE on asynchronous. The TC51WHM616AXBN65 has the page access operation. Page size is 8 words. The device also supports deep power-down mode, realizing low-power standby.




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