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TC51WHM516AXGN

Features: • Organized as 2,097,152 words by 16 bits• Single power supply voltage of 2.6 to 3.3 V• Direct TTL compatibility for all inputs and outputs• Deep power-down mode: Memory cell data invalid• Page operation mode:Page read operation by 8 words• Logic compa...

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SeekIC No. : 004513872 Detail

TC51WHM516AXGN: Features: • Organized as 2,097,152 words by 16 bits• Single power supply voltage of 2.6 to 3.3 V• Direct TTL compatibility for all inputs and outputs• Deep power-down mode: M...

TC51WHM516AXGN Data Sheet

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Part Number:
TC51WHM516AXGN
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Organized as 2,097,152 words by 16 bits
• Single power supply voltage of 2.6 to 3.3 V
• Direct TTL compatibility for all inputs and outputs
• Deep power-down mode: Memory cell data invalid
• Page operation mode:
Page read operation by 8 words
• Logic compatible with SRAM R/W (WE) pin
• Standby current
   Standby                               70 A
   Deep power-down standby 5 A


Specifications

SYMBOL
RATING
VALUE
UNIT
VDD
 Power Supply Voltage
−1.0 to 3.6
V
VIN
 Input Voltage
−1.0 to 3.6``
V
VOUT
 Output Voltage
−1.0 to 3.6
V
Topr.
 Operating Temperature
−25 to 85
Tstrg.
 Storage Temperature
−55 to 150
Tsolder
 Soldering Temperature (10 s)
260
PD
 Power Dissipation
0.6
W
IOUT
 Short Circuit Output Current
50
mA



Description

The TC51WHM516AXGN is a 33,554,432-bit pseudo static random access memory(PSRAM) organized as 2,097,152 words by 16 bits. Using Toshiba's CMOS technology and advanced circuit techniques, it provides high density, high speed and low power. The device operates single power supply. The TC51WHM516AXGN also features SRAM-like W/R timing whereby the device is controlled by CE1 ,OE , and WE on asynchronous. The device has the page access operation. Page size is 8 words. The TC51WHM516AXGN also supports deep power-down mode, realizing low-power standby.




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