TC51WHM516AXBN70

Series: -
Format - Memory: RAM
Speed: 70ns
Interface: Parallel
Packaging: Tray
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA
Memory Size: 32M (2M x 16)
Operating Temperature: -25°C ~ 85°C
Manufacturer: Toshiba
Memory Type: PSRAM (Pseudo)
Voltage - Supply: 2.6 V ~ 3.3 V


Features:

• Organized as 2,097,152 words by 16 bits
• Single power supply voltage of 2.6 to 3.3 V
• Direct TTL compatibility for all inputs and outputs
• Deep power-down mode: Memory cell data invalid
• Page operation mode: Page read operation by 8 words
• Logic compatible with SRAM R/W (WE) pin
• Standby current Standby 70 µA Deep power-down standby 5 µA


Specifications

SYMBOL	RATING	VALUE	UNIT
VDD	Power Supply Voltage	−1.0 to 3.6	V
VIN	Input Voltage	−1.0 to 3.6	V
VOUT	Output Voltage	−1.0 to 3.6	V
Topr	Operating Temperature	−25 to 85
Tstg	Storage Temperature	−55 to 150
Tsolder	Soldering Temperature (10 s)	260
PD	Power Dissipation	0.6	w
IOUT	Short Circuit Output Current	50	mA

Description

The TC51WHM516AXBN70 is a 33,554,432-bit pseudo static random access memory(PSRAM) organized as 2,097,152 words by 16 bits. Using Toshiba's CMOS technology and advanced circuit techniques, it provides high density, high speed and low power. The TC51WHM516AXBN70 operates single power supply. The device also features SRAM-like W/R timing whereby the device is controlled by CE1 ,OE , and WE on asynchronous. The TC51WHM516AXBN70 has the page access operation. Page size is 8 words. The device also supports deep power-down mode, realizing low-power standby.