TC51V8512AF

The TC51V8512AF has the following features including Fast access time and low power dissipation;Single power supply voltage of 2.7 to 3.6 V;Data retention power supply voltage of 2.0 to 3.6 V;Internal counter can be used for auto and self refresh operations;Internal timer can be used for self refresh operation;2048 refresh cycles per 32 ms;All inputs ana outputs are TTL compatidie;Logic compatible with SRAM R/W pin.

The TC51V8512AF is a 4,194,304-bit CMOS pseudo static random access memory (PSR.AM) organized as 524,288 words by 8 bits. It feature a one-transistor dynamic memory cell using CMOS peripheral circuitry to provide large capacity, high speed and low power.It uses a single 2.7 to 3.6 V power supply. An OE/RFSH input selects either auto or self refresh operation.This device family also features SRAM-like write functions whereby data is written to the memory cell rising edge of R/W signal, for easy interfacing to microprocessors.The TC51V8512AF is molded in 32-pin 0.525-inch small-outline piastic packages(SOP),and thin small-outline plastic package (TSOP).The information contained herein is presented only as a guide for the application of our products. No responssibility is assumed  by TOSHIBA  CORPORATION for any  infringements of intellectual property or other  rights of the third parties which may  result from its  use.No license of TC51V8512AF is granted by  implication or otherwise  under  any  intellectual property or other rights of TOSHIBA CORPAORATION or others.

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