DescriptionThe TC51V16165BFT-70 is the Hyper Page Mode (EDO) dynamic RAM organized 1,048,576 words by 16 bits. The TC51V16165BFT-70 utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system us...
TC51V16165BFT-70: DescriptionThe TC51V16165BFT-70 is the Hyper Page Mode (EDO) dynamic RAM organized 1,048,576 words by 16 bits. The TC51V16165BFT-70 utilizes Toshiba's CMOS silicon gate process technology as well as...
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The TC51V16165BFT-70 is the Hyper Page Mode (EDO) dynamic RAM organized 1,048,576 words by 16 bits. The TC51V16165BFT-70 utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Multiplexed address inputs permit the TC51V16165BFT-70 to be packaged in a standard 50/44 pin plastic TSOP. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment. System oriented features include single power supply of 3.3V±0.3V tolerance, direct interfacing capability with high performance logic families such as Schottky LVTTL.
Features of the TC51V16165BFT-70 are:(1)1,048,576 word by 16 bit organization; (2)fast access time and cycle time; (3)single power supply of 3.3V10.3V with a built-in Vbb generator; (4)outputs unlatched at cycle end allows two-dimensional chip selection; (5)all inputs and outputs TTL compatible; (6)4096 refresh cycles/64ms.
The absolute maximum ratings of the TC51V16165BFT-70 can be summarized as:(1)input voltage:-0.3 to Vcc +0.3; (2)output voltage:-0.3 to Vcc +0.3; (3)power supply voltage:-0.3 to 4.6V; (4)operating temperature:0-70°C; (5)storage temperature:-55 to 150°C; (6)soldering temperature (10s):260°C; (7)power dissipation:600mW; (8)short circuit output current:50mA.Stress above those listed under "absolute maximum ratings" may cause permanent damage to the device.These are stress ratings only. Functional operation of this device at these or anv other conditions above those indicated in the operational sectionsof this specification is not implied and exposure to absolute maximum rating conditions for extended periods may affect device reliability.The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite).