DescriptionThe TC514260BJ-70 is the new generation dynamic RAM organized 262,144 word by 16 bit. The TC514260BJ-70 utilizes Toshiba's CMOS silicon gate process technology as well as advanced circui techniques to provide wide operating margins, both internally and to the system user. Multiplexed ad...
TC514260BJ-70: DescriptionThe TC514260BJ-70 is the new generation dynamic RAM organized 262,144 word by 16 bit. The TC514260BJ-70 utilizes Toshiba's CMOS silicon gate process technology as well as advanced circui ...
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The TC514260BJ-70 is the new generation dynamic RAM organized 262,144 word by 16 bit. The TC514260BJ-70 utilizes Toshiba's CMOS silicon gate process technology as well as advanced circui techniques to provide wide operating margins, both internally and to the system user. Multiplexed address inpu permit the TC514260BJ-70 to be packaged in a standard 40 pin plastic SOJ, and 44/40 pin plastic TSOP. Th package size provides high system bit densities and is compatible with widely available automated testing an insertion equipment. System oriented features of TC514260BJ-70 include single power supply of 5V±10% tolerance, direc interfacing capability with high performance logic families such as Schottky TTL.
The features of TC514260BJ-70 can be summarized as (1)262,144 word by 16 bit organization; (2)fast access time and cycle time; (3)single power supply of 5V±10% with a built- in VBB generator; (4)low power 550mW MAX operating (TC514273BJ-70), 468mW MAX. operating (TC5I4273BJ-80), 5.5mW MAX. standby; (5)outputs unlatched at cycle end allows two-dimensional chip selection; (6)read-modify-write, CAS before RAS refresh, RAS-only refresh, hidden refresh, fast page mode and test mode capability; (7)all inputs and outputs compatible; (8)512 refresh cyc1es/8ms; (9)package TC514260BJ: SOJ40-P-400, TC514260BFT : TSOP44-P-400B .
The absolute maximum ratings of TC514260BJ-70 are (1)input voltage VIN: -1~7V; (2)output voltage VOUT: -1~7V; (3)power supply voltage VCC: -1~7V; (4)operating temperature TOPR: 0~70°C; (5)storage temperature TSTG: -55~150°C; (6)soldering temperature-time TSOLDER: 260·10°C·sec; (7)power dissipation PD: 700mW; (8)short circuit output current IOUT: 50mA.