TC5141001J-80

The TC5141001J-80 belongs to TC5141001J/Z family which is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC5141001J-80 utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Multiplexed address inputs permit the TC5141001J-80 to be packaged in a standard 26/20 pin plastic SOJ and 20 pin plastic ZIP. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment. System oriented features of TC5141001J-80 include single power supply of 5V±10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL.

The features of TC5141001J-80 can be summarized as (1)4,194,304 word by 1 bit organization; (2)fast access time and cycle time; (3)single power supply of 5V±10% with a built-in VBB generator; (4)low power, 550mW operating (TC5141001J/Z-80), 460mW operating (TC5141001J/Z-10), 5.5mW MAX. standby; (5)output unlatched at cycle end allows two-dimensional chip selection; (6)common I/O capability; (7)read-modify-write, CAS before RAS refresh, RAS only refresh, hidden refresh, nible mode and test mode capability; (8)all inputs and output TTL compatible; (9)1024 refresh cycles/16ms; (10)package plastic SOJ: TC514100J, plastic ZIP: TC514100Z.

The absolute maximum ratings of TC5141001J-80 are (1)input voltage VIN: -1~7V; (2)output voltage VOUT: -1~7V; (3)power supply voltage VCC: -1~7V; (4)operating temperature TOPR: 0~70°C; (5)storage temperature TSTG: -55~150°C; (6)soldering temperature-time TSOLDER: 260·10°C·sec; (7)power dissipation PD: 600mW; (8)short circuit output current IOUT: 50mA.