TC511664BJ-10

The TC511664BJ-10 belongs to TC511664BJ/BZ family which is the new generation dynamic RAM organized 65,536 words by 16 bits. The TC511664BJ-10 utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Multiplexed address inputs permit the TC511664BJ-10 to be packaged in a standard 40 pin plastic SOJ and 40 pin plastic ZIP. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment. System oriented features of TC511664BJ-10 include single power supply of 5V±10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL.

The features of TC511664BJ-10 can be summarized as (1)65,536 word by 16 bit organization; (2)fast access time and cycle time; (3)single power supply of 5V±10% with a built-in VBB generator; (4)low power, 633mW operating (TC511664BJ/BZ-80), 495mW operating(TC511664BJ/BZ-10), 5.5mW MAX. standby; (5)output unlatched at cycle end allows two-dimensional chip selection; (6)common I/O capability; (7)read-modify-write, CAS before RAS refresh, RAS only refresh, hidden refresh, nible mode and test mode capability; (8)all inputs and output TTL compatible; (9)256 refresh cycles/4ms; (10)package TC511664BJ: SOJ40-P-400, TC511664BZ: ZIP40-P-475.

The absolute maximum ratings of TC511664BJ-10 are (1)input voltage VIN: -1~7V; (2)output voltage VOUT: -1~7V; (3)power supply voltage VCC: -1~7V; (4)operating temperature TOPR: 0~70°C; (5)storage temperature TSTG: -55~150°C; (6)soldering temperature-time TSOLDER: 260·10°C·sec; (7)power dissipation PD: 700mW; (8)short circuit output current IOUT: 50mA.