Features: • 35.5 dBm Typical Power at 5.8 GHz• High Associated Gain: Ga = 8 dB Typical at 5.8 GHz• High Linearity: IP3 = 46 dBm Typical at 5.8 Ghz• High Power Added Efficiency: PAE 28 % for Class A Operation• Suitable for High Reliability Application• Lg = 0.6 ...
TC3989: Features: • 35.5 dBm Typical Power at 5.8 GHz• High Associated Gain: Ga = 8 dB Typical at 5.8 GHz• High Linearity: IP3 = 46 dBm Typical at 5.8 Ghz• High Power Added Efficienc...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Symbol | Parameter | Rating |
VDS VGS ID PT Pin TCH TSTG |
Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Dissipation Input Power, CW Channel Temperature Storage Temperature |
12 V -5 V 3 A 12 W 33 dBm 175 - 65 to +175 |
The TC3989 is a 35.5 dBm partially prematched power FET assembled in a flange ceramic package. It requires simple matching networks to achieve high gain and high linearity for 5.8 GHz applications. All devices are 100 % DC and RF tested to assure consistent quality.