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TC3977

Features: • 3W Typical Output Power• 12dB Typical Linear Power Gain at 2.45GHz• High Linearity: IP3 = 45 dBm Typical• High Power Added Efficiency: Nominal PAE of 35%• Breakdown Voltage: BVDGO 18V• Wg = 7.5 mm• 100 % DC Tested• Suitable for High Reli...

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SeekIC No. : 004513603 Detail

TC3977: Features: • 3W Typical Output Power• 12dB Typical Linear Power Gain at 2.45GHz• High Linearity: IP3 = 45 dBm Typical• High Power Added Efficiency: Nominal PAE of 35%• B...

TC3977 Data Sheet

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Part Number:
TC3977
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 3W Typical Output Power
• 12dB Typical Linear Power Gain at 2.45GHz
• High Linearity: IP3 = 45 dBm Typical
• High Power Added Efficiency: Nominal PAE of 35%
• Breakdown Voltage: BVDGO 18V
• Wg = 7.5 mm
• 100 % DC Tested
• Suitable for High Reliability Application



Specifications

Symbol
CONDITIONS
MIN
TYP
MAX
UNIT
P1dB
Output Power at 1dB Gain Compression Point VDS = 10 V
34.5
35.5
dBm
GL
Linear Power Gain VDS = 10 V
12
dB
IP3
Intercept Point of the 3rd-order Intermodulation VDS = 10 V, *PSCL = 24 dBm
45
dBm
PAE
Power Added Efficiency at 1dB Compression Power
35
%
IDS
Drain-Source Current at VDS = 10 V
900
mA
BVDGO
Drain-Gate Breakdown Voltage at IDGO = 3.75mA
18
22
Volts
Rth
Thermal Resistance
5.3
/W
Note: *PSCL: Output Power of Single Carrier Level.


Description

The TC3977 is a single-bias Cu-based ceramic packaged device with TC1706N PHEMT GaAs FETs, which is designed to provide the single power supply. The Cu-based ceramic package provides excellent thermal conductivity for the GaAs FET. The TC3977 is suitable for oscillator and power amplifiers in a wide range of commercial application. All devices are 100% DC tested to assure consistent quality.




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