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TC3967

Features: • 2W Typical Output Power• 12.5dB Typical Linear Power Gain at 2.45GHz• High Linearity: IP3 = 43 dBm Typical• High Power Added Efficiency: Nominal PAE of 35%• Breakdown Voltage: BVDGO 15V• Wg = 5 mm• 100 % DC Tested• Suitable for High Reli...

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SeekIC No. : 004513602 Detail

TC3967: Features: • 2W Typical Output Power• 12.5dB Typical Linear Power Gain at 2.45GHz• High Linearity: IP3 = 43 dBm Typical• High Power Added Efficiency: Nominal PAE of 35%•...

TC3967 Data Sheet

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Part Number:
TC3967
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 2W Typical Output Power
• 12.5dB Typical Linear Power Gain at 2.45GHz
• High Linearity: IP3 = 43 dBm Typical
• High Power Added Efficiency: Nominal PAE of 35%
• Breakdown Voltage: BVDGO 15V
• Wg = 5 mm
• 100 % DC Tested
• Suitable for High Reliability Application
• Lost Cost Ceramic Package


Description

The TC3967 is a self-bias Cu-based ceramic packaged device with TC1601N PHEMT GaAs FETs, which is designed to provide the single power supply application. The Cu-based ceramic package provides excellent thermal conductivity for the GaAs FET. The devices only need to provide the positive voltage to drain and ground the source, which is suitable for oscillator, power amplifier application in a wide range of commercial application. All devices are 100% DC tested to assure consistent quality.




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