Position: Home  > All Categories> Integrated Circuits (ICs) > TC3947

TC3947

Features: • 0.5W Typical Output Power at 6GHz• 12dB Typical Linear Power Gain at 6GHz• High Linearity: IP3 = 37 dBm Typical at 6GHz• High Power Added Efficiency: Nominal PAE of 35% at 6GHz• Breakdown Voltage: BVDGO 15V• Lg = 0.35 µm, Wg = 1.2 mm• 10...

product image

TC3947 Picture
See larger image
SeekIC No. : 004513598 Detail

TC3947: Features: • 0.5W Typical Output Power at 6GHz• 12dB Typical Linear Power Gain at 6GHz• High Linearity: IP3 = 37 dBm Typical at 6GHz• High Power Added Efficiency: Nominal PAE ...

TC3947 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
TC3947
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/4

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 0.5W Typical Output Power at 6GHz
• 12dB Typical Linear Power Gain at 6GHz
• High Linearity: IP3 = 37 dBm Typical at 6GHz
• High Power Added Efficiency: Nominal PAE of 35% at 6GHz
• Breakdown Voltage: BVDGO 15V
• Lg = 0.35 µm, Wg = 1.2 mm
• 100 % DC Tested
• Suitable for High Reliability Application
• Lost Cost Ceramic Package


Specifications

Symbol Parameter Value
VDS Drain-Source Voltage 12 V
Pin RF Input Power, CW 23 dBm
PT Continuous Dissipation 1.5 W
TCH Channel Temperature 175
TSTG Storage Temperature - 65 to +175



Description

The TC3947 is a self-bias Cu-based ceramic packaged device with TC1401N PHEMT GaAs FETs, which is designed to provide the single power supply application. The Cu-based ceramic package provides excellent thermal conductivity for the GaAs FET. The devices only need to provide the positive voltage to drain and ground the source, which is suitable for oscillator, power amplifier application in a wide range of commercial application. All devices are 100% DC tested to assure consistent quality.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Audio Products
HUC1002
WM-64CT
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Resistors
A101G
3006P-1-205LF
View more