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TC2996D

Features: ·12 W Typical Power at 2.45 GHz·11 dB Typical Linear Power Gain at 2.45 GHz·High Linearity: IP3 = 50 dBm Typical·High Power Added Efficiency: Nominal PAE of 40 %·Suitable for High Reliability Application·Wg = 30 mm·100 % DC and RF Tested·Flange Ceramic PackageSpecifications Symbol...

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TC2996D: Features: ·12 W Typical Power at 2.45 GHz·11 dB Typical Linear Power Gain at 2.45 GHz·High Linearity: IP3 = 50 dBm Typical·High Power Added Efficiency: Nominal PAE of 40 %·Suitable for High Reliabil...

TC2996D Data Sheet

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Part Number:
TC2996D
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·12 W Typical Power at 2.45 GHz
·11 dB Typical Linear Power Gain at 2.45 GHz
·High Linearity: IP3 = 50 dBm Typical
·High Power Added Efficiency: Nominal PAE of 40 %
·Suitable for High Reliability Application
·Wg = 30 mm
·100 % DC and RF Tested
·Flange Ceramic Package


Specifications

Symbol
Parameter
Rating
VDS
 Drain-Source Voltage
12 V
VGS
 Gate-Source Voltage
-5 V
IDS
 Drain Current
IDSS
Pin
 RF Input Power, CW
35dBm
PT
 Continuous Dissipation
30 W
TCH
 Channel Temperature
175
TSTG
 Storage Temperature
- 65 to +175

HANDLING PRECAUTIONS:
The user must operate in a clean, dry environment. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V.




Description

The TC2996D is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifier for commercial applications.




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