Features: • 1W Typical Output Power at 6 GHz• 11dB Typical Power Gain at 6 GHz• High Linearity: IP3 = 40 dBm Typical at 6 GHz• High Power Added Efficiency: PAE 43 % for Class A Operation• Suitable for High Reliability Application• Breakdown Voltage: BVDGO 15 V...
TC2571: Features: • 1W Typical Output Power at 6 GHz• 11dB Typical Power Gain at 6 GHz• High Linearity: IP3 = 40 dBm Typical at 6 GHz• High Power Added Efficiency: PAE 43 % for Clas...
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Symbol |
Parameter |
Rating |
VDS |
Drain-Source Voltage |
12 V |
VGS |
Gate-Source Voltage |
-5 V |
IDS |
Drain Current |
IDSS |
Pin |
RF Input Power, CW |
26 dBm |
PT |
Continuous Dissipation |
3.8 W |
TCH |
Channel Temperature |
175 |
TSTG |
Storage Temperature |
- 65 to +175 |
The TC2571 is packaged the TC1501 Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power chip. The cu-based ceramic package that requires a surface-mount package is a low-cost and high performance package. All devices are 100% DC tested to assure consistent quality. Typical applications include high dynamic range power amplifier for commercial applications including Cellular/PCS systems, and military high performance power amplifier.