TC2571

Features: • 1W Typical Output Power at 6 GHz• 11dB Typical Power Gain at 6 GHz• High Linearity: IP3 = 40 dBm Typical at 6 GHz• High Power Added Efficiency: PAE 43 % for Class A Operation• Suitable for High Reliability Application• Breakdown Voltage: BVDGO 15 V...

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TC2571 Picture
SeekIC No. : 004513525 Detail

TC2571: Features: • 1W Typical Output Power at 6 GHz• 11dB Typical Power Gain at 6 GHz• High Linearity: IP3 = 40 dBm Typical at 6 GHz• High Power Added Efficiency: PAE 43 % for Clas...

floor Price/Ceiling Price

Part Number:
TC2571
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2025/1/12

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Product Details

Description



Features:

• 1W Typical Output Power at 6 GHz
• 11dB Typical Power Gain at 6 GHz
• High Linearity: IP3 = 40 dBm Typical at 6 GHz
• High Power Added Efficiency: PAE 43 % for Class A Operation
• Suitable for High Reliability Application
• Breakdown Voltage: BVDGO 15 V
• Lg = 0.35 µm, Wg = 2.4 mm
• 100 % DC Tested
• Low Cost Ceramic Package



Specifications

Symbol
Parameter
Rating
VDS
Drain-Source Voltage
12 V
VGS
Gate-Source Voltage
-5 V
IDS
Drain Current
IDSS
Pin
RF Input Power, CW
26 dBm
PT
Continuous Dissipation
3.8 W
TCH
Channel Temperature
175
TSTG
Storage Temperature
- 65 to +175



Description

The TC2571 is packaged the TC1501 Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power chip. The cu-based ceramic package that requires a surface-mount package is a low-cost and high performance package. All devices are 100% DC tested to assure consistent quality. Typical applications include high dynamic range power amplifier for commercial applications including Cellular/PCS systems, and military high performance power amplifier.




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