TC253SPD-30

Features:

Very Low Noise,High Sensitivity Electronically Variable
High Resolution,1/3-in Format,Solid State Charge-Coupled Device(CCD)Frame Transfer Image Sensor for Black and White,NTSC,and Computer Applications
340,000 Pixela per Field
Frame Memory
656(H)×496(V) Active Pixels in Image Sensing Area Compatible With Electronic Centering
Multimode Readout Capability   
   Progressive Scan
   Interlace Scan
   Line Summing  

Fast Single-Pulse Clear Capability
Continuous Electronic Exposure Control from 1/30 s to 1/5,000 s
7.4-m Square Pixels
Advanced Lateral Overflow Drain Low Dark Current
High Photoresponse Uniformity Over a Wide Spectral Range
Solid-State Reliability With No Image Burn-In, Residual Imaging, Image  Distortion, Image Lag, or Microphonics

Specifications

Supply voltage range, V_SS: ADB (see Note1) .....................................................SUB to SUB + 15 V
Supply voltage range, V_SS: ODB ........................................................................SUB to SUB + 20 V
Input voltage range, V_I: IAG, SAG, SRG2....................................................................−8 V to + 8 V
Input voltage range, V_I: SRG1....................................................................................−5 V to + 8 V
Input voltage range, V_I: CMG ..................................................................................−5 V to + 15 V
Operating free-air temperature range, T_A..................................................................−10 to 45
Storage temperature range, TSTG..............................................................................−30 to 85
Operating case temperature range, TC.......................................................................−10to 55

Description

The TC253SPD-30 is a frame-transfer, CCD image sensor designed for use in black and white, NTSC TV,
computer, and special-purpose applications requiring high sensitivity, low noise, and small size.
The TC253SPD-30 is a new device of the IMPACTRON family of very-low noise, high sensitivity image
sensors that multiply charge directly in the charge domain before conversion to voltage. The charge carrier
multiplication (CCM) is achieved by using a low-noise, single-carrier, impact ionization process that occurs
during repeated carrier transfers through high-field regions. Applying multiplication pulses to specially designed
gates activates the CCM. The amount of multiplication is adjustable according to the amplitude of multiplication
pulses. The device function resembles the function of image intensifiers implemented in solid state.