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TC1301

Features: • Low Noise Figure: NF = 0.8 dB Typical at 12 GHz • High Associated Gain: Ga = 10 dB Typical at 12 GHz • High Dynamic Range: 1 dB Compression Power P-1 = 24 dBm at 12 GHz • Breakdown Voltage: BVDGO 9 V • Lg = 0.25 m, Wg = 600 m • All-Gold Metallizatio...

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SeekIC No. : 004513168 Detail

TC1301: Features: • Low Noise Figure: NF = 0.8 dB Typical at 12 GHz • High Associated Gain: Ga = 10 dB Typical at 12 GHz • High Dynamic Range: 1 dB Compression Power P-1 = 24 dBm at 12 GHz...

TC1301 Data Sheet

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Part Number:
TC1301
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low Noise Figure:  NF = 0.8 dB Typical at 12 GHz
• High Associated Gain:  Ga = 10 dB Typical at 12 GHz
• High Dynamic Range:
1 dB Compression Power P-1 = 24 dBm at 12 GHz
• Breakdown Voltage:  BVDGO 9 V
• Lg = 0.25 m, Wg = 600 m
• All-Gold Metallization for High Reliability
• 100 % DC Tested 


Specifications

Symbol Parameter
Rating
VDS Drain-Source Voltage
7.0 V
VGS Gate-Source Voltage
-3.0 V
IDS Drain Current
IDSS
IGS Gate Current
600 A
Pin RF Input Power, CW
20 dBm
PT Continuous Dissipation
800 mW
TCH Channel Temperature
175
TSTG Storage Temperature
- 65 to +175



Description

The TC1301 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 40 GHz and suitable for low noise and medium power amplifier applications including a wide  range of  commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond  pads are gold plated for either thermo-compression or thermo-sonic wire bonding.




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