Features: SpecificationsDescriptionThe TB31213FNG is designed as one kind of bi-CMOS integrated circuit silicon monolithic.Features of it can be summarized as:(1)one packaging two systems prescaler and PLL for receiver and transmitter;(2)low operating power supply voltage:Vcc=2.0 to 5.5V;(3)low cu...
TB31213FNG: Features: SpecificationsDescriptionThe TB31213FNG is designed as one kind of bi-CMOS integrated circuit silicon monolithic.Features of it can be summarized as:(1)one packaging two systems prescaler ...
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The TB31213FNG is designed as one kind of bi-CMOS integrated circuit silicon monolithic.Features of it can be summarized as:(1)one packaging two systems prescaler and PLL for receiver and transmitter;(2)low operating power supply voltage:Vcc=2.0 to 5.5V;(3)low current consumption:Icc=8 mA(typ.);(4)input frequency:f=200 to 520 MHz;(5)high input sensitivity:Vin=93 to 107 dBuV;(6)charge pump is constant current type and is able to change output current by serial data;(7)reference oscillation circuit is adopted circuit of bipolar,so getting the stable X'tal oscillation circuit;(8)available standby control for receiver and transmitter independent of each other.
The maximum ratings of the TB31213FNG can be summarized as:(1)power supply voltage:6 V;(2)power dissipation:780 mW;(3)operating temperature:-30 to 85;(4)storage temperature:-55 to 150.
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