TB1010F

Features of the TB1010F are:(1)MOS IC with 22-stage binary counter;(2)built-in initialize circuit;(3)buit-in voltage detection comparator;(4)wide range timer setting;(5)low power dissipation current;(6)suitable for Ni-cd battery charger.

The absolute maximum ratings of the TB1010F can be summarized as:(1):the parameter is supply voltage,the symbol is VDD,the rating is -0.3 to 7.0,the unit is V;(2):the parameter is power dissipation,the symbol is PD,the rating is 250 to 300,the unit is mW;(3):the parameter is operating temperature range,the symbol is Topr,the rating is -20 to 75,the unit is ;(4):the parameter is storage temperature range,the symbol is Tstg,the rating is -55 to 125,the unit is ;(5):the parameter is electrostatic discharge,the symbol is ESD,the rating is ±200,the unit is V;(6):the parameter is latch up current,the symbol is IL,the rating is ±10,the unit is mA.

The electrical characteristics of the TB1010F can be summarized as:(1):the characteristic is operating voltage,the symbol is Vopr,the Min is 4.0,the Typ is 5.0,the Max is 6.0,the unit is V;(2):the characteristic is oscillation frequency characteristic,the symbol is fosc1,the Max is 10,the unit is %;(3):the characteristic of the TB1010F is oscillation frequency characteristic,the symbol is fosc2,the Max is 15,the unit is %;(4):the characteristic is power dissipation current,the symbol is IQD,the Max is 130,the unit is A;(5):the characteristic is power dissipation current,the symbol is IDD,the Max is 700,the unit is A;(6):the characteristic is power on reset release voltage,the symbol is VthH,the Min is 1.4,the Typ is 2.5,the Max is 3.5,the unit is V;(7):the characteristic is power on reset release voltage,the symbol is VthL,the Min is 1.4,the Typ is 2.5,the Max is 3.5,the unit is V.