TAN 350 Selling Leads, Price trend, TAN 350 DataSheet download, circuit diagram from SeekIC.com

SpecificationsPower DissipationDevice Dissipation @25 (Pd) 1450 W (At rated pulse condition)Voltage and CurrentCollector to Base Voltage (BVces) 65VEmitter to Base Voltage (BVebo) 2.0 VCollector Current (Ic) 40 ATemperaturesStorage Temperature -65 to +200 Operating Junction Temperature +230 Descri...

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SeekIC No. : 004512397 Detail

TAN 350: SpecificationsPower DissipationDevice Dissipation @25 (Pd) 1450 W (At rated pulse condition)Voltage and CurrentCollector to Base Voltage (BVces) 65VEmitter to Base Voltage (BVebo) 2.0 VCollector Cur...

TAN 350 Data Sheet

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Part Number:: TAN 350
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/24

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Recent History
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US $126 - 180 / Piece

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US $30 - 30.6 / Piece

Capacitor Kits 10 pcs of each value T498 and T499
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US $30 - 30.6 / Piece

Capacitor Kits 10each 19values Low ESR Polymer

Product Details

Description

Specifications

Power Dissipation
Device Dissipation @25 (P_d)                 1450 W (At rated pulse condition)
Voltage and Current
Collector to Base Voltage (BV_ces)            65V
Emitter to Base Voltage (BV_ebo)              2.0 V
Collector Current (I_c)                               40 A
Temperatures
Storage Temperature                              -65 to +200
Operating Junction Temperature             +230

Description

The TAN 350 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life.

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TAN 350

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