SpecificationsMaximum Power Dissipation @ 252 583 WattsMaximum Voltage and CurrentBVces Collector to Base Voltage 55 VoltsBVebo Emitter to Base Voltage 3.5 VoltsIc Collector Current 15 AmpsMaximum TemperaturesStorage Temperature - 65 to + 150 Operating Junction Temperature + 200DescriptionThe TAN1...
TAN150: SpecificationsMaximum Power Dissipation @ 252 583 WattsMaximum Voltage and CurrentBVces Collector to Base Voltage 55 VoltsBVebo Emitter to Base Voltage 3.5 VoltsIc Collector Current 15 AmpsMaximum T...
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The TAN150 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life.