DescriptionThe TA8553FN is a kind of bipolar monolithic integrated circuit for use of G-force sensor amp. The device detects G-force by connecting sensor externally. There are some features of the TA8553FNas follows: (1)supply voltage: +5 V; (2)the device detects by external G-force sensor and ca...
TA8553FN: DescriptionThe TA8553FN is a kind of bipolar monolithic integrated circuit for use of G-force sensor amp. The device detects G-force by connecting sensor externally. There are some features of the ...
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The TA8553FN is a kind of bipolar monolithic integrated circuit for use of G-force sensor amp. The device detects G-force by connecting sensor externally.
There are some features of the TA8553FN as follows: (1)supply voltage: +5 V; (2)the device detects by external G-force sensor and can detect both X-direction and Y-direction; (3)the device could set follows: total gain and cut off frequency; (4)the device includes following blocks: reference voltage circuit, reset circuit, voltage fault detector and op-amp; (5)reference voltage used band-gap circuit and superior temperature characteristics; (6)powersave mode is a low power mode and act only reference circuit, reset circuit; (7)package: SSOP20-225A (0.65 mm pitch).
The following is about the absolute maximum ratings of the TA8553FN: (1)power supply voltage, VCC: 7 V; (2)input voltage range, VIN: -0.3 to VCC+0.3 V; (3)power dissipation, PD: 960 mW; (4)storage temperature, Tstg: -55 to 150; then is about the recommended operating conditions: (1)power supply voltage, VCC: 5 V±10% V; (2)operating temperature, Topr: -40 to 85.
The last one is about the electrical characteristics of the TA8553FN(unless otherwise noted, VCC=5 V, Ta=25): (1)supply current (PWSV mode), ICCS: 1.1 mA typ and 1.5 mA max at PS="H"; (2)supply current, ICCD: 5 mA max at PS="L"; (3)input voltage, H level, VIH: 3.0 V min; (4)input voltage, L level, VIL: 1.4 V max; (5)threshold voltage, VTH: 2.3 V typ.