DescriptionThe TA201600A is a power silicon controlled rectifiers are designed for phase control applications.These are all-diffused,press-pak devices employing the field-proven amplifying gate. Features of the TA201600A are:(1)low on-state voltage;(2)high di/dt;(3)high dv/dt;(4)hermetic packagin...
TA201600A: DescriptionThe TA201600A is a power silicon controlled rectifiers are designed for phase control applications.These are all-diffused,press-pak devices employing the field-proven amplifying gate. Fe...
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The TA201600A is a power silicon controlled rectifiers are designed for phase control applications.These are all-diffused,press-pak devices employing the field-proven amplifying gate.
Features of the TA201600A are:(1)low on-state voltage;(2)high di/dt;(3)high dv/dt;(4)hermetic packaging;(5)excellent surge and I2t ratings.Applications of the TA201600A are:(1)power supplies;(2)motor control.
The maximum ratings of the TA201600A can be summarized as:(1):the characteristic is non-repetitive transient peak reverse voltage voltage,the symbol is VRSM,the rating is VRRM+100V,the unit is V;(2):the characteristic is RMS on-state current,the symbol is IT(RMS),the rating is 2500,the unit is A;(3):the characteristic is average on-state current,the symbol is IT(AV),the rating is 1600,the unit is ;(4):the characteristic is peak one-cycle surge (non-repetitive) on-state current 60Hz,the symbol is ITSM,the rating is 29500,the unit is A;(5):the characteristic is peak one-cycle surge (non-repetitive) on-state current 50Hz,the symbol is ITSM,the rating is 26900,the unit is A;(6):the characteristic is circuit rate-of-rise of one-state current (non- repetitive),the symbol is di/dt,the rating is 400,the unit is A/s;(7):the characteristic is circuit rate-of-rise of one-state current (repetitive),the symbol is di/dt,the rating is 150,the unit is A/s;(8):the characteristic is I2t,one cycle at 60 Hz,the symbol is I2t,the rating is 3.63*10^6,the unit is A2sec;(9):the characteristic is peak gate power dissipation,the symbol is PGM,the rating is 16,the unit is W;(10):the characteristic is average gate power dissipation,the symbol is PG(av),the rating is 3,the unit is W;(11):the characteristic is storage temperature,the symbol is Tstg,the rating is -40 to 150,the unit is ;(12):the characteristic is operating temperature,the symbol is Tj,the rating is -40 to 125,the unit is ;(13):the characteristic is mounting force,the rating is 9000 to 11000,the unit is Ib;(14):the characteristic is mounting force,the rating is 4100 to 5000,the unit is kg;(15):the characteristic is average current 180°sine wave,the symbol is IT(av),the rating is 2160,the unit is A;(16):the characteristic is RMS one-state current,the symbol is IT(rms),the rating is 3390,the unit is A;(17):the characteristic is approximate weight,the rating is 2.1,the unit is Ib;(18):the characteristic is approximate weight,the rating is 950,the unit is g.