T9G01000A

The features of T9G01000A are: (1)low on-state voltage; (2)high di/dt capability; (3)high dv/dt capability; (4)hermetic packaging; (5)excellent surge and I2t ratings.

The following is about the maximum ratings of T9G01000A: (1)non-repetitive transient peak reverse voltage: VRRM+100V; (2)RMS on-state current, TC=82: 1590A; (3)average current 180° sine wave, TC= 82: 1000A; (4)RMS on state current, TC=55: 2100A; (5)average current 180° sine wave, TC= 55: 1340A; (6)peak one cycle surge on-state current 60Hz: 17000A; (7)peak one cycle surge on-state current 50Hz: 15500A; (8)critical rate-of-rise of on-state current(non-repetitive): 600A/sec; (9)critical rate-of-rise of on-state current(repetitive): 150A/sec; (10)I2t for one cycle, 60Hz: 1,203,000 A2sec; (11)peak gate power dissipation: 16W.

The electrical characteristics of the T9G01000A are: (1)repetitive peak reverse leakage current: 75mA; (2)peak on-state voltage: 1.75V max; (3)threshold voltage, low-level: 0.90398V; (4)slope resistance, low-level: 0.49075m; (5)VTM coefficients, low-level: 0.11284; (6)typical turn-on time: 3sec; (7)typical turn-off time: 250sec.