T820900A

The features of T820900A are: (1)low on-state voltage; (2)high di/dt capability; (3)high dv/dt capability; (4)hermetic packaging; (5)excellent surge and I2t ratings.

The following is about the maximum ratings of T820900A: (1)RMS on-state current, TC=70: 1410A; (2)average current 180° sine wave, TC=70: 900A; (3)RMS on-state current, TC=55: 1725A; (4)average current 180° sine wave, TC=55: 1100A; (5)critical rate-of-rise of on-state current: 400A/sec; (6)peak gate power dissipation: 16W; (7)average gate power dissipation: 3W; (8)operating temperature: -40 to +125; (9)storage temperature: -40 to +125.

The electrical characteristics of the T820900A are: (1)repetitive peak reverse leakage current: 35mA; (2)peak on-state voltage: 1.35V max; (3)threshold voltage, low-level: 0.78526V; (4)slope resistance, low-level: 0.3505m; (5)VTM coefficients, low-level: 0.68865; (6)typical turn-on time: 5sec; (7)typical turn-off time: 200sec.