T7S0087504DN

The T7S0087504DN is powerex silicon controlled rectifiers (SCR) are designed for phase control applications.These are all-diffused,press-pak,hermetic pow-R-disc device  employing the field-proven amplifying (di/namic) gate.

Features of the T7S0087504DN are:(1)low on-state voltage;(2)high di/dt;(3)high dv/dt;(4)hermetic packaging;(5)excellentsurge and I2t ratings.Applications of the T7S0087504DN are:(1)power supplies;(2)motor control.

The absolute maximum ratings of the T7S0087504DN can be summarized as:(1):the parameter is RMS on-state current,the symbol is IT(RMS),the value is 1180,1260,the unit is A;(2):the parameter is average on-state current,the symbol is IT(AV),the value is 750,800,the unit is A;(3):the parameter is peak one-cycle surge (non-repetitive) on-state current(60Hz),the symbol is ITSM,the value is 10500,the unit is A;(4):the parameter is peak one-cycle surge (non-repetitive) on-state current(50Hz),the symbol is ITSM,the value is 9600,the unit is A;(5):the parameter is critical rate-of-rise of one state current (non-repetitive),the symbol is di/dt,the value is 600,the unit is A;(6):the parameter is critical rate-of-rise of one state current (repetitive),the symbol is di/dt,the value is 150,the unit is A;(7):the parameter is I2t for fusing,the symbol is I2t,the value is 460000,the unit is A2s;(8):the parameter is peak gate power dissipation,the symbol is PGM,the value is 16,the unit is W;(9):the parameter is average gate power dissipation,the symbol is PG(AV),the value is 3,the unit is W;(10):the parameter is storage temperature,the symbol is Tstg,the value is -40 to 150,the unit is ;(11):the parameter is operating temperature,the symbol is Tj,the value is -40 to 125,the unit is ;(12):the parameter is mounting torque,the value is 2000 to 2400,the unit is lb;(13):the parameter is mounting torque,the value is 900 to 1090,the unit is kg.