Features: • Single 3-V Supply Voltage• High Power-added Efficient Power Amplifier (PoutTypically 23 dBm)• Ramp-controlled Output Power• Current-saving Standby Mode• Few External Components• HP-VFQFP-N16 PackagePinoutSpecifications Parameter Symbol V...
T7023: Features: • Single 3-V Supply Voltage• High Power-added Efficient Power Amplifier (PoutTypically 23 dBm)• Ramp-controlled Output Power• Current-saving Standby Mode• Few...
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Parameter |
Symbol |
Value |
Unit |
Supply voltage |
VS |
6 |
V |
Junction temperature |
Tj |
150 |
|
Storage temperature |
Tstg |
-40 to +125 |
|
RF input power PA |
PinPA |
10 dBm |
dBm |
The T7023 is a monolithic SiGe power amplifier. It is especially designed for operationin TDMA systems like Bluetooth, DECT, and many other ISM applications according toFCC part 15.
Due to the ramp-control feature and a very low quiescent current, an external switchtransistor for VS is not required.