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T435

Features: ·ITRMS = 4 A .·VDRM = 400 V to 800 V .·SENSITIVEGATE : IGT 3 10mA ·HIGH COMMUTATION : (dI/dt)c > 3.5 A/msSpecifications Symbol Parameter Value Unit IT(RMS) RMS on-state current(360° conduction angle) TO220ABSOT194/SOT82 Tc=75°C 4 A ISOWATT220AB Tc=100°C...

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SeekIC No. : 004511156 Detail

T435: Features: ·ITRMS = 4 A .·VDRM = 400 V to 800 V .·SENSITIVEGATE : IGT 3 10mA ·HIGH COMMUTATION : (dI/dt)c > 3.5 A/msSpecifications Symbol Parameter Value Unit IT(RMS) RMS on-state ...

T435 Data Sheet

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Part Number:
T435
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·ITRMS = 4 A .
·VDRM = 400 V to 800 V .
·SENSITIVEGATE : IGT 3 10mA
·HIGH COMMUTATION : (dI/dt)c > 3.5 A/ms


Specifications

Symbol Parameter
Value
 Unit
IT(RMS)
 RMS on-state current
(360° conduction angle)		 TO220AB
SOT194/SOT82
Tc=75°C
4
A
ISOWATT220AB
Tc=100°C
ITSM Non repetitive surge peak on-state current
( Tj initial = 25 )
tp = 8.3 ms
35
A
tp = 10 ms
30
I2t I2t value
tp = 10 ms
4.5
A2s
dI/dt Critical rate of rise of on-state current
Gate supply : IG = 500 mA diG/dt = 1 A/s
Repetitive
F = 50 Hz
10
A/s
Non
Repetitive
50
Tstg
Tj
 Storage and operating junction temperature range
- 40 to + 150
- 40 to + 125

TL

 Maximum lead temperature for soldering during 10 s at 4.5 mm from case
260
Symbol
Parameter
T410 or T435
Unit
-400
-600
-700
 -800
VDRM
VRRM
 Repetitive peak off-state voltage
Tj = 125
400
600
700
800
V



Description

The T410 / T435 high voltage TRIAC Families are high performance planar diffused PNPN devices glass passivated technology.

Packaged either in TO220AB, SOT82, SOT194 and ISOWATT220AB these products are intented for all bi-directional switch applications.




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