T431616D/E

      Here I will show you a product named T431616D/E. The T431616D/E is a widely used kind of product. First of all, let me show the description of the T431616D/E to you. The T431616D/E SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized as 2048 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command. The T431616D/E provides for programmable Read or Write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The refresh functions, either Auto or Self Refresh are easy to use. By having a programmable mode register, the system can choose the most suitable modes to maximize its performance. These devices are well suited for applications requiring high memory bandwidth and particularly well suited to high performance PC applications.
      In addition, I will show you the absolute maximum ratings of the T431616D/E. The first absolute maximum rating is input and output voltage, which is - 1.0 ~ 4.6 V. The second absolute maximum rating is power supply voltage which is -1.0 ~ 4.6 V. The third absolute maximum rating is operating temperature which is 0 ~ 70 °C . The fourth absolute maximum rating is storage temperature which is - 55 ~ 125 °C. The fifth absolute maximum rating is power dissipation, which is 1 W. The sixth absolute maximum rating is short circuit output current, which is 50 mA.
      The T431616D/E also has some features. The first feature is self refresh mode: standard and low power. The second feature is internal pipelined architecture. The third feature is programmable mode registers. The fourth feature is individual byte controlled by LDQM and UDQM. The fifth feature is auto refresh and self refresh. The sixth feature is4096 refresh cycles/64ms. The seventh feature is CKE power down mode. The eighth feature is 50-pin 400 mil plastic TSOP II package. The ninth feature is Lead Free Package available for both TSOP II and
VFBGA.